| PART |
Description |
Maker |
| FDD8878 |
N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm
|
Fairchild Semiconductor
|
| FDP8878 |
N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| STD40NE03L 6070 |
From old datasheet system
N - CHANNEL 30V - 0.012 ohm - 40A TO-252 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD40NF03L -STD40NF03L |
N-CHANNEL 30V - 0.012 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD40NF3LLT4 |
N-CHANNEL 30V - 0.009 OHM - 40A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| STD40NF3LL |
N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
| ENA1479A ATP10212 ATP102-TL-H ATP102 |
P-Channel Power MOSFET, -30V, -40A, 18.5mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| STW120NF10 W120NF10 B120NF10 P120NF10 STB120NF10 S |
N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRFPS3810 |
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
Power MOSFET(Vdss=100V Rds(on)=0.009ohm Id=170A)
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)
|
IRF[International Rectifier]
|
| STP40NS15 |
N-CHANNEL 150V 0.042 OHM 40A TO-220 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
